The crystallographic relationship of heteroepitaxial diamond films on scratched silicon substrates
| Autor: | Qiaojun Gao, X.H. Pan, L.P. You, FaFa Zhang, Z.D. Lin, X.F. Peng |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Silicon Mechanical Engineering chemistry.chemical_element Diamond General Chemistry Substrate (electronics) Chemical vapor deposition engineering.material Epitaxy Electronic Optical and Magnetic Materials Protein filament Crystallography chemistry Transmission electron microscopy Materials Chemistry engineering Partial dislocations Electrical and Electronic Engineering |
| Zdroj: | Diamond and Related Materials. 6:1836-1840 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/s0925-9635(97)00147-7 |
| Popis: | By using the straight hot filament chemical vapor deposition method with one falt horizonatal filament, diamond films were rapidly grown on a scratched silicon substrate. Observing two kinds of interface structures of the samples by cross-section high-resolution transmission electron microscopy, we found that diamond {111}-oriented films are epitaxially grown on β-SiC{111} planes with a tilt angle of about 7° around the common [110] axis. We also found that diamond〈771〉 planes are parallel to silicon〈111〉 planes on which diamonds are directly epitaxially grown on silicon substrate. The interface dislocations are of either 60°-type or Schockley partial dislocation in relation to our observations. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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