Structural and electrical evolution of the Al/RuO2 interface upon thermal annealing
| Autor: | Elzbieta Kolawa, M.-A. Nicolet, Quat T. Vu |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Materials science
Annealing (metallurgy) Contact resistance chemistry.chemical_element Sputter deposition Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Transmission line Aluminium Sandwich compound Transmission electron microscopy Materials Chemistry Crystallite Electrical and Electronic Engineering Composite material |
| Zdroj: | Solid-State Electronics. 34:271-278 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(91)90184-z |
| Popis: | The interfacial behavior between bilayers of aluminum and ruthernium dioxide deposited by (r.f.) magnetron sputtering has been studied after annealing at temperatures in the range 450°C–550°C for durations up to several hours by backscattering spectrometry, cross-sectional transmission electron microscopy and electrical four-point probe measurement of specially designed structures. An interfacial aluminum-oxygen compound layer is shown to grow with a concurrent reduction of a thin layer of RuO2. This result is independent of the various deposition conditions investigated. Cross-sectional transmission electron microscopy shows this interfacial layer to be polycrystalline and very non-uniform. Specially designed structures of the type 〈Si〉/SiO2/Al/RuO2/Al were annealed and measured with four-point probe setups having different probe spacings. Applying a transmission line type-model for four-point probe measurement of multilayered structures, the specific contact resistance between Al and RuO2 was derived and shown to decrease with annealing duration at 500°C. This evolution of the specific contact resistance indicates that the interfacial reaction does not lead to an insulating interface as could have been expected if the interfacial growth were pure and dense Al2O3. |
| Databáze: | OpenAIRE |
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