Energy spectrum of rhombohedral III-V-VI2compounds: ternary isoelectronic analogues of bismuth-type semimetals

Autor: V. G. Kantser, V. A. Tofan, N. M. Malkova, D. V. Gitsu
Rok vydání: 1990
Předmět:
Zdroj: Journal of Physics: Condensed Matter. 2:1129-1140
ISSN: 1361-648X
0953-8984
DOI: 10.1088/0953-8984/2/5/007
Popis: A model of the electronic energy spectrum for the rhombohedral III-V-VI2 compounds (the ternary isoelectronic analogues of the bismuth-type semimetals and the IV-VI semiconductors) has been elaborated on the basis of the genesis of their crystalline structure from the simple cubic lattice as well as the derivation of the band spectrum from the atomic p states. Rhombohedral III-V-VI2 compounds are shown to be narrow-gap semiconductors, with two conduction and two valence bands located at Gamma - and L points of the Brillouin zone. The band structure of TlBiC2VI compounds has been found to be normal, while that of TlSbC2VI is inverted.
Databáze: OpenAIRE