| Autor: |
A.-M. Lanzillotto, Mansour Shayegan, J. Jo, M. B. Santos |
| Rok vydání: |
1991 |
| Předmět: |
|
| Zdroj: |
Journal of Crystal Growth. 111:366-370 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/0022-0248(91)91002-r |
| Popis: |
We report the realization of quasi-three-dimensional electron systems in selectively-doped wide parabolic quantum wells, focusing on a novel superlattice which contains a high-mobility ( ≈ 1.1×10 5 cm 2 /V⋯s at 4 K) degenerate electron system. This molecular beam epitaxy grown structure is a wide undoped Al x Ga 1−x As well bounded by undoped (spacer) and doped layers of Al y Ga 1−y As(y > x) on both sides. The alloy composition in the well is graded in a way that results in a parabolic potential with a sinusoidal modulation superimposed on it. Once transferred into this well, the electrons screen the parabolic potential and an electron system with a modulated charge density profile is obtained. We present self-consistent quantum mechanical calculations of the electronic system and our characterization of the structure by secondary ion mass spectrometry and magnetotransport measurements. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
