| Autor: |
P. Grant, S. L. Wu, Ishiang Shih, C.X. Qiu, M.W. Denhoff, L. Li |
| Rok vydání: |
1991 |
| Předmět: |
|
| Zdroj: |
Materials Letters. 11:161-163 |
| ISSN: |
0167-577X |
| DOI: |
10.1016/0167-577x(91)90072-e |
| Popis: |
Thin films of MgO with a thickness of 0.1 μm were deposited by reactive rf sputtering on monocrystalline p-type Si substrates as a diffusion barrier for high-Tc superconductor/semiconductor hybrid devices. After a heat treatment at temperatures from 700 to 1000°C in oxygen, the MgO Si samples were investigated by Auger electron spectroscopy (AES) for elemental distribution and differential capacitance measurements for surface electrical properties. The AES results showed the formation of a mixed MgO SiO x layer with a thickness of about 500 A after a treatment at 900°C for 1 h. The differential capacitance results showed a decrease of the minority carrier lifetime in Si after the treatment at temperatures above 800°C. The interface state density estimated from the preliminary capacitance results was about 1011 cm−2 eV−1. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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