| Autor: |
J. David Cohen, Christopher P. Thompson, J.H. Boyle, Peter T. Erslev, Gregory M. Hanket, William N. Shafarman |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
2010 35th IEEE Photovoltaic Specialists Conference. |
| Popis: |
Ag-alloying of Cu(InGa)Se 2 thin films presents the possibility to increase the bandgap with improved structural properties as a result of a lower melting temperature. (AgCu)(InGa)Se 2 films were deposited by elemental co-evaporation and the resulting solar cell behavior was characterized. While the bandgap in the highest efficiency Cu(InGa)Se 2 cells is ∼1.15 eV, Ag alloying allows the bandgap to be increased to 1.3 eV with an increase in V OC , no loss in device efficiency, and fill factors up to 80%. With high Ga content to increase bandgap > 1.5 eV, Ag alloying improves solar cell efficiency. Analysis of the device behavior shows that the basic mechanisms controlling (AgCu)(InGa)Se 2 solar cells and limiting performance with wide bandgap are comparable to those with Cu(InGa)Se 2 . Finally the effect of Na in (AgCu)(InGa)Se 2 devices is shown to be comparable to that with Cu(InGa)Se 2 including a decrease in V OC attributed to interface recombination with insufficient Na. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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