Increased Stability of Subsurface C Induced by Ca on the C-Incorporated Si(001)-4°-off Substrate
| Autor: | Hidong Kim, Jae M. Seo, Bolortsetseg Tuvdendorj, Nyamaa Tsogtbaatar, Altaibaatar Lkhagvasuren |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Photoemission spectroscopy Analytical chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences Synchrotron law.invention Adsorption chemistry law 0103 physical sciences Scanning tunneling microscope 0210 nano-technology Carbon |
| Zdroj: | Journal of the Korean Physical Society. 76:991-1000 |
| ISSN: | 1976-8524 0374-4884 |
| DOI: | 10.3938/jkps.76.991 |
| Popis: | The effects of Ca atoms adsorbed on the C-incorporated Si(001)-4°-off substrate have been investigated by using scanning tunneling microscopy (STM) and synchrotron photoemission spectroscopy (PES). The C atoms incorporated into the subsurface by C2H2 exposure and postannealing at 630 °C induce the c(4 × 4) structure and debunch the double-layer DB steps. The Ca atoms additionally adsorbed on this C-incorporated substrate induce terraces with a width twice that of the clean surface. Until postannealing up to 680 °C, no SiC trace is detected. The SiC islands start to be detected after postannealing at 780 °C, which is about 100 °C higher than that for the identical surface without Ca atoms. After the adsorbed Ca atoms are mostly desorbed by 880 °C postannealing, the SiC islands only remain on the surface. Such a result implies that the adsorbed Ca atoms act as a stabilizer to the subsurface C atoms and increase the onset temperature of SiC formation by 100 °C. |
| Databáze: | OpenAIRE |
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