MOVPE growth of in situ Ga catalyzed AlGaAs nanowires on sapphire substrate
| Autor: | Jaya Lohani, R. Tyagi, Rajesh K. Bag, D. K. Pandya, Rajesh Singh |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
010302 applied physics
In situ Nanostructure Materials science Nanowire Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Catalysis Metal Chemical engineering visual_art 0103 physical sciences visual_art.visual_art_medium Sapphire substrate Metalorganic vapour phase epitaxy Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 27:2335-2341 |
| ISSN: | 1573-482X 0957-4522 |
| Popis: | Growth of single crystalline AlGaAs nanostructures was carried out on highly lattice mismatched sapphire substrate by metal organic vapor phase epitaxy technique without using any external catalyst. In situ deposited Ga droplets were used as catalyst for the growth of AlGaAs nanostructures. The effects of growth temperature and V/III ratio were studied in detail. The growth of nanowires required a careful optimization of the growth conditions. The formation of well-faceted nanostructures and nanowires with hexagonal cross-section were found to be influenced by the growth parameters. The growth of nanostructures proceeds via VS growth mechanism after the consumption of initial Ga droplets depending on the growth conditions. |
| Databáze: | OpenAIRE |
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