Reabsorption, band‐gap narrowing, and the reconciliation of photoluminescence spectra with electrical measurements for epitaxialn‐InP

Autor:	R. M. Sieg, Steven A. Ringel
Rok vydání:	1996
Předmět:	Materials science Photoluminescence Condensed matter physics business.industry Band gap Doping Fermi level General Physics and Astronomy Photon energy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy symbols.namesake Semiconductor symbols Electrical measurements business
Zdroj:	Journal of Applied Physics. 80:448-458
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.362746
Popis:	The effects of reabsorption and band‐gap narrowing (BGN) on experimental photoluminescence (PL) spectra of n‐InP grown by metalorganic chemical vapor deposition are analyzed. PL spectra show a pronounced widening of the main PL peak and a shift of that peak to higher photon energy with increasing doping due to band filling. However, the magnitude of these effects, both here and in earlier studies of n‐type III–V semiconductors, is smaller than expected based upon band filling calculations and electrical measurements. Various explanations for these discrepancies between PL spectra and band filling calculations have been proposed, but little experimental support is currently available. In this article we demonstrate unambiguously that both the n‐InP PL peak width and the peak position are significantly reduced by reabsorption, and that reabsorption completely explains the observed discrepancy between the measured PL peak width and the calculated band filling based on electrical measurements. In particular, ...
Databáze:	OpenAIRE
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