Oxide confining layer on an InP substrate

Autor:	L. Leprince, Jean Decobert, G. Le Roux, F. Caillet, M. Quillec, P. Legay
Rok vydání:	1999
Předmět:	Thermal oxidation Molecular diffusion Materials science business.industry Diffusion Superlattice Oxide Physics::Optics General Physics and Astronomy Substrate (electronics) Epitaxy Condensed Matter::Materials Science chemistry.chemical_compound chemistry Optoelectronics business Layer (electronics)
Zdroj:	Journal of Applied Physics. 85:2428-2430
ISSN:	1089-7550 0021-8979
Popis:	Wet thermal oxidation of a strained balanced superlattice structure, epitaxially grown on InP and including high Al content layers, is investigated. The oxidation kinetics are studied as a function of temperature and oxidation duration. The results are interpreted with a simple diffusion model. We propose use of this structure as a confining layer for monolithic long wavelength vertical cavity surface emitting lasers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::98a98697ebf5a8881c247d0189f17774 https://doi.org/10.1063/1.369561 Zobrazit plný text záznamu