Activation and deactivation of phosphorus in silicon-on-insulator substrates
| Autor: | Chih-Hung Lin, Ruey-Dar Chang |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) Mechanical Engineering Doping Inorganic chemistry Silicon on insulator 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Amorphous solid Mechanics of Materials 0103 physical sciences General Materials Science Rapid thermal annealing 0210 nano-technology Excimer laser annealing |
| Zdroj: | Materials Science in Semiconductor Processing. 42:219-222 |
| ISSN: | 1369-8001 |
| Popis: | Phosphorus that had been implanted into silicon-on-insulator (SOI) substrates was activated using different annealing techniques to investigate phosphorus deactivation at low temperatures. A combination of amorphization and excimer laser annealing (ELA) greatly enhanced phosphorus activation. However, heavy doping with phosphorus reduced the thickness of the amorphous layer. Furnace annealing at 350 °C following ELA induced significant deactivation and the deactivation behavior was similar to that following rapid thermal annealing (RTA). The temperature-dependence of phosphorus deactivation in samples that were implanted with a dose of 5×10 16 cm −2 showed a transition at 400 °C. The deactivation behavior was more sensitive to temperature below 400 °C than above it. Samples with an implantation dose of 5×10 15 cm −2 exhibited only a weak temperature-dependence of deactivation at temperatures above 400 °C, implying that the transition of temperature-dependence is caused by the change of the deactivation mechanism with the phosphorus activation level. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect