Interface states and the barrier height of Schottky diodes

Autor:	J.L. Freeouf, M. Wittmer
Rok vydání:	1993
Předmět:	Physics Silicon chemistry business.industry Schottky barrier General Physics and Astronomy Optoelectronics Schottky diode chemistry.chemical_element business Metal–semiconductor junction
Zdroj:	Physics Letters A. 173:190-194
ISSN:	0375-9601
DOI:	10.1016/0375-9601(93)90185-3
Popis:	The interface states at metal-semiconductor junctions are still a matter of debate. We present a novel approach to this issue that uses state-of-the-art techniques to prepare silicon surfaces with different surface terminations and employs non-interacting Schottky contacts to measure the barrier height. We report a difference of 50 mV in barrier height for Hg Schottky diodes on Si(111) surfaces with different surface terminations.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::98967dc8b958e413aaf8ef1fcabe75df https://doi.org/10.1016/0375-9601(93)90185-3 Zobrazit plný text záznamu