Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE
| Autor: | D.E. Lacklison, L.B Flannery, C. T. Foxon, R.I Dykeman, Tin S. Cheng, Ian Harrison |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Fabrication business.industry Mechanical Engineering Detector Time constant Photodetector Condensed Matter Physics medicine.disease_cause Metal semiconductor Metal Optics Mechanics of Materials visual_art medicine visual_art.visual_art_medium Optoelectronics General Materials Science Transient response business Ultraviolet |
| Zdroj: | Materials Science and Engineering: B. 50:307-310 |
| ISSN: | 0921-5107 |
| Popis: | We have fabricated interdigital metal-semiconductor-metal ultraviolet photoconductors using p-type GaN grown by MBE. The material had a hole concentration of 10 18 cm −3 and a mobility of 5 cm 2 V −1 s −1 . The spectral response of the detectors has been measured and it shows a peak at 364.2 nm (3.402 eV) possibly caused by excitonic effects. The transient response of the photodetector cannot be described by a single time constant. The rise and fall times of the photoresponse are different indicating that the theory usually applied to GaN photoconductors is not valid. |
| Databáze: | OpenAIRE |
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