Silicon dioxide films fabricated by ECR microwave plasmas

Autor:	Douglas J. Thomson, T. V. Herak, Douglas A. Buchanan, S.R. Mejia, K. C. Kao, Robert D. McLeod, T.T. Chau
Rok vydání:	2003
Předmět:	Materials science Silicon dioxide technology industry and agriculture Analytical chemistry Chemical vapor deposition Plasma equipment and supplies Electron cyclotron resonance chemistry.chemical_compound chemistry Crystalline silicon Refractive index Excitation Microwave
Zdroj:	Proceedings., Second International Conference on Properties and Applications of Dielectric Materials.
DOI:	10.1109/icpadm.1988.38367
Popis:	Silicon dioxide films were deposited on crystalline silicon substrates by microwave plasma-enhanced CVD. An axial DC magnetic field in the plasma chamber produced electron cyclotron resonance (ECR) conditions at an excitation frequency of 2.45 GHz. Films were grown on Si
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::98870b913b1eeaaf3048d6537a193865 https://doi.org/10.1109/icpadm.1988.38367 Zobrazit plný text záznamu