High performance 300mm backside illumination technology for continuous pixel shrinkage

Autor:	Chi-Chuan Wang, F. Ramberg, H. Rhodes, Jen-Cheng Liu, Calvin Yi-Ping Chao, Dyson H. Tai, Vincent Venezia, Shou-Gwo Wuu, Candace Su-Jung Tsai, Dun-Nian Yaung, Wen-De Wang, C.C. Chuang, W.P. Mo, Tzu-Hsuan Hsu, B.C. Hsieh, Ta-Wei Wang, Yeur-Luen Tu
Rok vydání:	2011
Předmět:	Wafer-scale integration Materials science Silicon Pixel Annealing (metallurgy) business.industry chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Dielectric chemistry Hardware_INTEGRATEDCIRCUITS Back-illuminated sensor Optoelectronics Wafer Image sensor business
Zdroj:	2011 International Electron Devices Meeting.
Popis:	Backside Illumination (BSI) sensor with excellent optical performance has become the main-stream CMOS image sensor process. This work addressed the key factors and issues for 300mm BSI technology, including wafer distortion, silicon thickness variation, backside junction formation and dielectric film structure, thermal annealing and so on. It is demonstrated that with the optimized key process, a high performance 0.9um BSI pixel with low noise can be fabricated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::98827d6af2d9b7933d614557b70b11c0 https://doi.org/10.1109/iedm.2011.6131512 Zobrazit plný text záznamu