A metal tunnel insulator silicon switch using MOS type gating (MOSMISS)
| Autor: | A. G. Nassibian, J. M. Dell, H. Pecorari |
|---|---|
| Rok vydání: | 1980 |
| Předmět: |
Materials science
Silicon business.industry Voltage control chemistry.chemical_element Insulator (electricity) Hardware_PERFORMANCEANDRELIABILITY Gating chemistry Logic gate Hardware_INTEGRATEDCIRCUITS Optoelectronics Channel modulation Electrical and Electronic Engineering business Hardware_LOGICDESIGN Voltage |
| Zdroj: | International Journal of Electronics. 49:437-446 |
| ISSN: | 1362-3060 0020-7217 |
| DOI: | 10.1080/00207218008901203 |
| Popis: | Experimental results and a description of operating mechanisms are presented for a new, easily integrated M ISS device using MOS-type gating. The device is a lateral version of the MISS structure with switching voltage control obtained via channel modulation using the MOS gate. For the devices presented here the switching voltage can be varied between 2 V and 14 V using the MOS gate. The device can be applied to the same areas as the conventional MISS, however the ease of Integration makes it especially attractive for integrated logic circuits. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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