Organic n-type field-effect transistor
| Autor: | Edsko Enno Havinga, E.J. Lous, Dago M. de Leeuw, Adam R. Brown |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Differential capacitance
business.industry Chemistry Mechanical Engineering Transistor Metals and Alloys Condensed Matter Physics Tetracyanoquinodimethane Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Semiconductor Mechanics of Materials law Materials Chemistry Optoelectronics Field-effect transistor business Communication channel |
| Zdroj: | Synthetic Metals. 66:257-261 |
| ISSN: | 0379-6779 |
| DOI: | 10.1016/0379-6779(94)90075-2 |
| Popis: | We have used tetracyanoquinodimethane (TCNQ) as the active semiconducting material in metal-insulator-semiconductor field-effect transistors (MISFETs). TCNQ behaves as an n-type semiconductor. Differential capacitance measurements on metal-insulator-semiconductor (MIS) devices confirm the n-type behaviour. A maximum field-effect mobility of 3 × 10 −5 cm 2 V −1 s −1 is observed. On exposure to air the on/off ratio of the FETs improves to in excess of 450, due to oxidative dedoping of the TCNQ and narrowing of the channel. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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