Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

Autor: S. Kubotsch, H. Grampeix, Vincent Jousseaume, Ch. Walczyk, Christophe Vallée, Patrice Gonon, Malgorzata Sowinska, T. Bertaud, Damian Walczyk, Thomas Schroeder, C. Mannequin, Ch. Wenger
Rok vydání: 2012
Předmět:
Zdroj: Thin Solid Films. 520:4551-4555
ISSN: 0040-6090
Popis: This paper deals with the impact of the top metal electrode on the resistive switching properties of HfO 2 -based Metal-Insulator-Metal diodes. By screening five different metals as top electrode, Al–Cu–Hf–Pt–Ti, we have demonstrated the feasibility of the resistive switching effect on HfO 2 . Metals with a low enthalpy of formation of oxides Δ H f 0 (Pt and Cu) lead to uni-polar switching whereas easily oxidizable metals with a higher Δ H f 0 (Al, Hf and Ti) lead to bipolar switching. Cu-, Hf- and Pt-based devices show a degradation of the top electrode after the forming step by the formation of bubbles whereas such phenomenon was not observed in Al- and Ti-based devices. 200 switching cycles were performed on each device in order to extract the main parameters of the resistive switching effect: I ON and I OFF currents in the mA range, R OFF /R ON resistance ratio up to 5, V set and V reset , voltage levels around 1 V, and powers dissipated during read and write operations in the μW and mW range, respectively. For all systems, the reset process dissipates higher power than the set process. From these results, the Ti top adlayer shows the best performance in terms of stability and resistive switching characteristics.
Databáze: OpenAIRE
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