Secondary ion emission from a GaAs single crystal upon bombardment with Bi m + cluster ions
| Autor: | U. Kh. Rasulev, S.N. Morozov |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Analytical chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Spectral line Gallium arsenide Ion chemistry.chemical_compound chemistry Physics::Plasma Physics Yield (chemistry) 0103 physical sciences Mass spectrum Cluster (physics) Atomic physics Gallium Nuclear Experiment 0210 nano-technology Single crystal |
| Zdroj: | Bulletin of the Russian Academy of Sciences: Physics. 80:105-108 |
| ISSN: | 1934-9432 1062-8738 |
| DOI: | 10.3103/s1062873816020210 |
| Popis: | Secondary-ion mass spectra and energy distributions upon bombarding a gallium arsenide single crystal using Bim+(m = 1–5) cluster ions with energies of 2–12 keV are investigated. The gallium cluster ion yield grew nonadditively with the number of atoms in the cluster projectiles. A quasi-thermal component found in the energy spectra of secondary Ga+ and Ga2+ ions is indicative of the occurrence of the thermal spike mode upon cluster ion bombardment. The quasi-thermal component in the yield of atomic Ga+ ions upon bombardment with Bi2+–Bi5+–ions is 35–75%. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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