The effect of TiO2on the microstructural and electrical properties of low voltage varistor based on (Sn,Ti)O2ceramics
| Autor: | Marcelo Ornaghi Orlandi, Mario Cilense, Paulo Roberto Bueno, Elson Longo, Daniela Russo Leite, José Arana Varela |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Dopant Scanning electron microscope Doping Varistor Mineralogy Surfaces and Interfaces Condensed Matter Physics Grain size Surfaces Coatings and Films Electronic Optical and Magnetic Materials visual_art Materials Chemistry visual_art.visual_art_medium Grain boundary Ceramic Electrical and Electronic Engineering Composite material Low voltage |
| Zdroj: | physica status solidi (a). 207:457-461 |
| ISSN: | 1862-6319 1862-6300 |
| DOI: | 10.1002/pssa.200925304 |
| Popis: | SnO 2 ·CoO·Nb 2 O 5 ceramics doped with TiO 2 have been prepared by a conventional oxide method which focuses its application on low voltage varistors. The dopant was added in 0.5 and 1.0% molar concentrations, and the samples were investigated by X-ray diffraction, scanning electron microscopy, current vs. voltage, and impedance measurements. The electron microscopy results showed an increase in the mean grain size of ceramics with the addition of TiO 2 , which is related to the effect of the dopant on the matrix. The electrical characterization showed that the addition of TiO 2 in 1 mol% provides a system with a good nonlinear coefficient (8.7) and a breakdown electrical field of 617 V/cm. These results indicate that this composition can be applied as a low voltage varistor. The impedance data showed that the voltage barrier at the grain boundary is a back-to-back Schottky-type, and it was demonstrated that the addition of TiO 2 does not significantly modify the barrier. |
| Databáze: | OpenAIRE |
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