Novel integration techniques of 'recessed' high voltage field-drift MOSFET with HK/MG RMG technology
| Autor: | Yang Ching-Chung, Chiang Ping-Hung, Pu Shih-Chieh, Chang Kai-Kuen, Hsiao Shih-Yin, Liu Kuan-Liang, C.W. Lu, Wen-Fang Lee, Wang Chih-Chung, N.C. Lee, Chih-Chung Wang, Hsiung Chang-Po |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Display driver business.industry 020208 electrical & electronic engineering Gate dielectric High voltage 02 engineering and technology Integrated circuit 01 natural sciences Field (computer science) law.invention law Logic gate 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering Optoelectronics Metal gate business |
| Zdroj: | 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| DOI: | 10.1109/ispsd.2018.8393709 |
| Popis: | We report herein on the first commercial production of 32V high voltage Field-Drift MOSFET (FDMOS) embedded in HK/MG with RMG technology. To overcome the challenges encountered during the RMG process, a recessed structure with a specifically designed poly gate patterning was developed. By using the new scheme, the devices can prevent metal gate disruptions. By comparison with the traditional devices in poly/SiON technology, the recessed devices can maintain good performance without degradation. Some extra benefits are obtained with the scheme by 4 V improvement of gate dielectric breakdown. This approach can provide technological mass production techniques and reliable device characteristics for future PMIC and display driver ICs applications. |
| Databáze: | OpenAIRE |
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