Optical properties of the Si-doped GaN/Al2O3 films
| Autor: | A. V. Stronski, M. V. Vuychik, V. G. Boiko, N. S. Zayats, P. O. Gentsar, O. S. Litvin, I.B. Yanchuk |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Silicon business.industry Doping chemistry.chemical_element Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Optics chemistry Atomic electron transition Condensed Matter::Superconductivity Attenuation coefficient Sapphire Optoelectronics business Absorption (electromagnetic radiation) Refractive index |
| Zdroj: | Semiconductors. 43:590-593 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | Morphological and optical studies of the Si-doped GaN films (doping level NSi = 1.5 × 1019 cm−3) grown by vapor-phase epitaxy from metalorganic compounds on a sapphire substrate oriented along the c axis are conducted. For the grown GaN films, the following characteristics are obtained: energy of electron transition E0, absorption coefficient α, refractive index n, and frequencies of transverse and longitudinal optical lattice vibrations characteristic of the crystalline GaN films. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|