Physicochemical deposition features of peritectic alloys for high-density chipping of silicon crystals
| Autor: | I. N. Petukhov, V. L. Dshkhunyan, V. M. Roshchin, K. S. Sen’chenko, M. S. Vagin |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon Metallurgy High density chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Electrochemistry 01 natural sciences Electronic Optical and Magnetic Materials Crystal chemistry Vertical growth 0103 physical sciences Materials Chemistry Deposition (phase transition) Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | Russian Microelectronics. 45:324-328 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739716040090 |
| Popis: | Physicochemical aspects of the electrochemical formation of vertical contact structures of the Sn–Ag peritectic composition for chipping integrated microcircuits by the inverted crystal method are considered. The layer-by-layer deposition of metals is investigated and the conditions of the vertical growth of the structures are determined. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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