Resist Poisoning-Free Advanced PECVD-Based Anti-Reflective Coating (ARC) for 90nm Technology and Beyond

Autor: Sudha Rathi, Heraldo L. Botelho, Wendy H. Yeh, Hichem M'Saad, Derek R. Witty, Martin Jay Seamons, Jean Liu, Sang H. Ahn
Rok vydání: 2003
Předmět:
Zdroj: MRS Proceedings. 782
ISSN: 1946-4274
0272-9172
Popis: A nitrogen-free (N-free) dielectric anti-reflective coating (DARC®) was cost-effectively developed in a plasma-enhanced chemical vapor deposition (PECVD) reactor to eliminate the 193nm resist poisoning interaction caused when N2O is used as a precursor [1]. Although it was found that even a N-free ARC could poison sensitive 193nm resists with –OH radicals [2], which either exist inherently in the ARC or result from H2O absorption by the ARC surface, the current investigation has revealed that it was possible to minimize resist poisoning. Our investigation showed that compressive film stress directly correlates to H2O resistance. Therefore, it was possible to greatly improve the ARC resistance to H2O absorption by creating and maintaining a process regime that makes the ARC film dense. The dense ARC film demonstrated promising lithography performance with minimal resist poisoning as well as excellent shelf life and O2-ashing resistance. This paper explores the N-free DARC material, its development, lithographic integration results and implementation in a production environment to eliminate 193nm resist poisoning.
Databáze: OpenAIRE
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