| Autor: |
Fangmin Guo, Dayuan Xiong, W. E. Zhang |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
2010 3rd International Nanoelectronics Conference (INEC). |
| DOI: |
10.1109/inec.2010.5424691 |
| Popis: |
This work study on the performance characteristics of one kind of nano-optoelectronics device: InGaAs/GaAs very-long-wavelength quantum well infrared photodetector (VLW-QWIP). Based on a professional simulation tool Crosslight APSYS, we have determined the energy band, dark current spectra as well as those of the traditional AlGaAs/GaAs VLW-QWIPs under device operation temperature of 55 K. Larger responsivity and detectivity have been obtained from InGaAs/GaAs VLW-QWIPs due to its higher photoconductive gain and quantum efficiency, offering guidance for nano-optoelectronics device material choosing and optimization. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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