Quantum well and laser containing InAs quantum dots

Autor:	Xing-Jian Guo, Chin-An Chang, Pai-Yong Wang, Fei-Chang Hwang, Cheng-Zu Wu, Chiu-Yueh Liang
Rok vydání:	2001
Předmět:	Materials science Photoluminescence business.industry Doping Condensed Matter Physics Epitaxy Inorganic Chemistry Quantum dot Materials Chemistry Optoelectronics Thin film business Lasing threshold Quantum well Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 223:92-98
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(00)01019-8
Popis:	Multiple quantum wells (MQW) and laser-containing InAs quantum dots were grown on GaAs using molecularbeam epitaxy. For the MQW, the wells consisted of monolayers of InAs covered by In0.15Ga0.85As, with the barrier layers being GaAs. The photoluminescence measurements were correlated with the strain in the wells. A continuing strain was observed for the wells containing thin InAs layer, where the photoluminescence wavelength was close to that of In0.15Ga0.85As. For the wells with a thicker InAs layer, with a photoluminescence wavelength of 1.28mm, a discontinuing strain was observed. Doping of the well constituents with Si, individually or collectively, led to a reduced photoluminescence intensity, but an enhanced intensity was observed with the Be doping. Doping the InGaAs layer alone showed the least reduction in intensity using Si and most enhancement using Be. Continuous-wave lasing at room temperature was observed for the laser containing similar quantum wells. # 2001 Published by Elsevier Science B.V.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::983211db40dea429e0a1348e1016be31 https://doi.org/10.1016/s0022-0248(00)01019-8 Zobrazit plný text záznamu Full Text from ScienceDirect