The Cause of Subthreshold Leakage Currents Induced by Nucleons and Ions in Power MOSFETs

Autor:	A.M. Chugg, PA Morris, Christian Poivey, Sarah Parker, P.H. Duncan, Thomas S. Barber, Alex Hands
Rok vydání:	2013
Předmět:	Physics Nuclear and High Energy Physics Nuclear Energy and Engineering MicroDose Field (physics) Subthreshold conduction Electrical and Electronic Engineering Atomic physics Power MOSFET Nucleon Subthreshold slope Ion
Zdroj:	IEEE Transactions on Nuclear Science. 60:2530-2536
ISSN:	1558-1578 0018-9499
DOI:	10.1109/tns.2013.2246870
Popis:	Additional evidence is presented and discussed on the mechanism for the subthreshold leakage currents induced in power MOSFETs by single nucleon and ion interactions. The new evidence excludes microdose in gate oxides and instead points to microdose in field/edge oxides.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9826f0cc08bc1a22e58939a3952b6f26 https://doi.org/10.1109/tns.2013.2246870 Zobrazit plný text záznamu