Benefits of a thermal drift during atomic layer deposition of Al2O3 for C-Si passivation

Autor:	François Silva, Sergej Filonovich, Andy Zauner, Pavel Bulkin, Pere Roca i Cabarrocas, Fabien Lebreton
Rok vydání:	2017
Předmět:	Atomic layer deposition Materials science Silicon chemistry Diffusion barrier Passivation Chemical engineering Hydrogen Thermal chemistry.chemical_element Substrate (electronics) Deposition (chemistry)
Zdroj:	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
DOI:	10.1109/pvsc.2017.8366269
Popis:	Variation of the substrate temperature within the ALD window during deposition does not significantly impact the growth rate of Al 2 O 3 layers but changes their properties. Reduced initial deposition temperature allows storing hydrogen at the c-Si/ Al 2 0 3 interface. This hydrogen is steadily released during the deposition of upper layers due to the increase of substrate temperature. Al 2 0 3 can thus provide SRV
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::981eaaf41385765f08923612f849c977 https://doi.org/10.1109/pvsc.2017.8366269 Zobrazit plný text záznamu