Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs
| Autor: | G. Bruguier, F. Roubaud, J.-M. Palau, C. Dachs, P. Tastet, J. Gasiot |
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| Rok vydání: | 1994 |
| Předmět: |
Physics
Nuclear and High Energy Physics Computer simulation business.industry Transistor Electrical engineering Semiconductor device Computational physics Ion law.invention Nuclear Energy and Engineering law MOSFET Field-effect transistor Sensitivity (control systems) Electrical and Electronic Engineering Power MOSFET business |
| Zdroj: | IEEE Transactions on Nuclear Science. 41:2167-2171 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/23.340558 |
| Popis: | Triggering of Single Event Burnout (SEB) in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is studied by means of experiments and simulations based on real structures. Conditions for destructive and nondestructive events are investigated through current duration observations. The effect of the ion's impact position is experimentally pointed out. Finally, further investigation with 2D MEDICI simulations show that the different regions of the MOSFET cell indeed exhibit different sensitivity with respect to burnout triggering. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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