Design and realization of a millimeter-wave Si/SiGe HBT frequency multiplier
| Autor: | U. Erben, F.J. Beisswanger, J.-F. Luy, S. Bruce, M. Willander, Anders Rydberg, H. Schumacher, Magnus Karlsteen, M. Kim |
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| Rok vydání: | 1998 |
| Předmět: |
Radiation
Materials science business.industry Frequency multiplier Heterojunction bipolar transistor Transistor Heterojunction Condensed Matter Physics Silicon-germanium law.invention chemistry.chemical_compound chemistry law Extremely high frequency Equivalent circuit Optoelectronics Electrical and Electronic Engineering business Electrical impedance |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 46:695-700 |
| ISSN: | 0018-9480 |
| DOI: | 10.1109/22.668684 |
| Popis: | In this paper, the design of an active millimeter-wave frequency doubler using an Si/SiGe heterojunction bipolar transistor (HBT) as the active device is studied. Simulations are made using a developed physics-based large-signal model for Si/SiGe HBT's, which includes thermal dependence. Despite the high-output operating frequency of the fabricated doubler being close to f/sub max/ 67 GHz for the Si/SiGe HBT, the conversion efficiency in a not completely optimized circuit is found to be better than -12 dB. The 3-dB bandwidth for the doubler is approximately 7.4%. These results are found to be comparable to a heterojunction field-effect transistor (HFET) doubler operating equally close to its f/sub max/. Simulated results of the doubler performance with varied terminating impedances for the HBT are presented as design aids. |
| Databáze: | OpenAIRE |
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