GRIN-SCH AlGaInAs/InP quantum-well lasers emitting at 1300 nm

Autor:	R. M. Ash, J. Thompson, D. J. Robbins
Rok vydání:	1989
Předmět:	Materials science business.industry Laser law.invention Semiconductor laser theory Gallium arsenide chemistry.chemical_compound Optics chemistry law Semiconductor quantum wells Optoelectronics Electrical and Electronic Engineering business Quantum well
Zdroj:	Electronics Letters. 25:1530
ISSN:	0013-5194
Popis:	Buried-ridge GRIN-SCH quantum-well lasers operating at 1·3 μm with an AlGaInAs continuously graded separate confinement region and with AlGaInAs quantum wells have been demonstrated with CW threshold currents of 65 mA.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9803753e32a872f39bbba932457ba2b0 https://doi.org/10.1049/el:19891029 Zobrazit plný text záznamu