Tin Disulfide-Oxide (SnS2-xOx) as n-type Heterojunction Layer Processed by Chemical Bath Technique for Cd Free Fabrication of Compound Semiconductor Thin Film Solar Cells
| Autor: | Omar Asif, Alok C. Rastogi |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Band gap Mechanical Engineering Analytical chemistry Oxide chemistry.chemical_element Heterojunction 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy Mechanics of Materials General Materials Science Thin film 0210 nano-technology Tin Layer (electronics) Chemical bath deposition |
| Zdroj: | MRS Advances. 3:3301-3306 |
| ISSN: | 2059-8521 |
| DOI: | 10.1557/adv.2018.523 |
| Popis: | The chemical bath deposition of wide bandgap n-type SnS 2 films and role of sulphur precursor in suppression of p-type SnS phase is described. The as-deposited films are highly polycrystalline in hexagonal crystal structure. Inclusion of oxygen in the film phase is shown by the x-ray photoelectron spectroscopy (XPS) and Raman scattering methods which suggests the CBD films are better described as tin disulfide-oxide (SnS 2-x O x ) x=0.1. A possible mechanism of film formation is presented. Optical analysis showed energy bandgap 2.76 eV for SnS 2-x O x film which decreases to 2.62 eV with the inclusion of the secondary SnS phases. |
| Databáze: | OpenAIRE |
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