Plasmon scattering in electron and hole doped diamond
| Autor: | Ali Kazempour, Toktam Morshedloo |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Phonon Physics::Optics 02 engineering and technology Electron engineering.material 01 natural sciences Crystal Condensed Matter::Materials Science symbols.namesake Condensed Matter::Superconductivity 0103 physical sciences General Materials Science Electrical and Electronic Engineering 010306 general physics Plasmon Condensed matter physics Scattering Doping Diamond 021001 nanoscience & nanotechnology Condensed Matter Physics engineering symbols Condensed Matter::Strongly Correlated Electrons 0210 nano-technology Raman scattering |
| Zdroj: | Superlattices and Microstructures. 114:386-392 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2018.01.003 |
| Popis: | By using a first principle method, we address the plasmon manipulation of diamond crystal as a function of electron and hole doped concentration ranging from light to the heavy doping regime. Our results indicate that with increasing doping concentration plasmon resonances shift to lower energies into the near ultraviolet. Further, for electron and hole doped material, bulk plasmon dispersion shows a different trend compared with undoped crystal particularly at the small momentum transfer which is attributed to strong inhomogeneity of electron charge density. Eventually, by comparison of phonon linewidths a general discussion is presented about possible mechanisms of plasmon-phonon coupling. At heavy doping regime, near the zone edge, optical phonons have the most growing contribution in bulk plasmon damping which may lead to enhanced plasmon-assisted Raman scattering for doped diamond. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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