An RF-to-DC Rectifier With High Efficiency Over Wide Input Power Range for RF Energy Harvesting Applications
| Autor: | Ali Basaligheh, Parvaneh Saffari, Kambiz Moez |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Subthreshold conduction business.industry 020208 electrical & electronic engineering Electrical engineering Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 7. Clean energy law.invention Threshold voltage Rectifier CMOS Hardware and Architecture law Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering Resistor business Sensitivity (electronics) Hardware_LOGICDESIGN Electronic circuit Voltage |
| Zdroj: | IEEE Transactions on Circuits and Systems I: Regular Papers. 66:4862-4875 |
| ISSN: | 1558-0806 1549-8328 |
| DOI: | 10.1109/tcsi.2019.2931485 |
| Popis: | This paper presents, a wide input range, 4-stage threshold voltage compensated RF-to-DC power converter, designed to efficiently convert RF signals to dc voltages by applying an optimum compensation voltage produced by subthreshold auxiliary transistors. The proposed optimally compensated rectifiers can achieve higher efficiency over a wider input power range compared to other threshold voltage compensation circuits where the level of the compensation is limited by the circuit structure and varies with input power. The designed rectifier is implemented in three possible ways. This proposed compensation technique can be applied to a rectifier chain with a relatively low number of stages. Designed and implemented in a 130 nm CMOS technology, the proposed rectifier exhibits a measured PCE of above 20% over the 8.5-dB input power range while driving a 1- $\text{M}\Omega $ load resistor at 896-MHz. For the same load and utilizing a minimal number of compensated rectifier stages, the proposed circuit exhibits a maximum PCE of 43% at −11 dBm for single-ended Dickson-based CMOS rectifiers. The proposed circuit demonstrates a −20.5 dBm sensitivity for 1 V output across a 1- $\text{M}\Omega $ resistive load. |
| Databáze: | OpenAIRE |
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