Tunneling in all-high-Tcedge junctions with deposited barriers

Autor:	R. P. Robertazzi, John R. Kirtley, Roger H. Koch, J. M. Viggiano, Robert B. Laibowitz, William J. Gallagher, Alan Willis Kleinsasser, Robert L. Sandstrom
Rok vydání:	1992
Předmět:	Josephson effect chemistry.chemical_classification High-temperature superconductivity Materials science Condensed matter physics Conductance Edge (geometry) law.invention chemistry Electrical resistivity and conductivity law Electrode Inorganic compound Quantum tunnelling
Zdroj:	Physical Review B. 46:14830-14833
ISSN:	1095-3795 0163-1829
DOI:	10.1103/physrevb.46.14830
Popis:	All-high-${\mathit{T}}_{\mathit{c}}$-material edge junctions consisting of laser-ablated Y-Ba-Cu-O electrodes and an in situ rf-sputter-deposited MgO barrier have been fabricated whose I-V characteristics show tunneling-related effects. These include a junction resistance with an exponential dependence on the nominal-barrier thickness, gaplike structure observed in the conductance curves, and Josephson effects. These properties are very sensitive to the choice of materials-processsing method for the junction interfaces.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::97fc0e46919c2bd52f6e9f4ff38e76da https://doi.org/10.1103/physrevb.46.14830 Zobrazit plný text záznamu