High performance Ge pMOS devices using a Si-compatible process flow

Autor:	Karl Opsomer, Andre Stesmans, Matty Caymax, B. De Jaeger, M.M. Heyns, Lars-Ake Ragnarsson, Frederik Leys, David P. Brunco, G. Nicholas, Gillis Winderickx, Paul Zimmerman, Marc Meuris, Ben Kaczer
Rok vydání:	2006
Předmět:	Materials science Silicon business.industry Transistor chemistry.chemical_element Germanium law.invention PMOS logic chemistry law MOSFET Electronic engineering Optoelectronics Drain current business Leakage (electronics)
Zdroj:	2006 International Electron Devices Meeting.
DOI:	10.1109/iedm.2006.346870
Popis:	Ge pMOS mobilities up to 358 cm2/Vs are demonstrated using a Si-compatible process flow without the incorporation of strain. EOT is approximately 12 Aring with a gate leakage less than 0.01 A/cm 2 at Vt+ 0.6 V. Ge transistors are characterized with gate lengths ranging from 10 mum down to 0.125 mum, the shortest ever reported. We also present the best Ge pMOS drain current to date of 790 muA/mum at Vgt = Vd = -1.5V for an Lg of 0.19 mum
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::97f2ab23db25c2f80570a97be8e1477d https://doi.org/10.1109/iedm.2006.346870 Zobrazit plný text záznamu