Hydrogen bonding and transport in disordered silicon

Autor:	W. B. Jackson, M. Symons
Rok vydání:	1995
Předmět:	Materials science Muon Silicon chemistry Hydrogen Hydrogen bond Diffusion Doping Cubic centimetre chemistry.chemical_element Atomic physics Spectroscopy
Zdroj:	Philosophical Transactions of the Royal Society of London. Series A: Physical and Engineering Sciences. 350:237-248
ISSN:	2054-0299 0962-8428
DOI:	10.1098/rsta.1995.0011
Popis:	This paper reviews recent measurements of trap dominated hydrogen diffusion in disordered silicon. H transport can be described by a model with three levels: a transport level, shallow traps and deep traps. At low concentrations the diffusion is dominated by deep traps well separated in energy from shallow traps. At high H concentrations, the trap density ranges from 8 x 10 19 to 10 21 traps per cubic centimetre and increases roughly as the square root of the H concentration. Moreover, H diffusion depends on carrier concentration and doping levels as well as the H concentration. Muon spectroscopy should be able to provide previously inaccessible information about the transport levels, shallow traps and the effects of carriers on H motion in the shallow traps.
Databáze:	OpenAIRE
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