Selective and Shallow Emitter Cells via Anodic Oxidation
| Autor: | Bram Sadlik, B., Grischke, R., Efinger, R., Yu, K., Wardle, T., Osipov, A., Rubin, L. |
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| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: | |
| DOI: | 10.4229/25theupvsec2010-2cv.3.91 |
| Popis: | 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 2395-2398 Anodic oxidation is an electrochemical method for growing precise films of oxide driven by an applied bias voltage. The oxide thickness is related to the applied bias while the growth rate is limited by the oxide thickness leading to a very uniform and easily controlled process. Here the oxidation is used to selectively etch back the dead layer of a heavily doped emitter producing a selective emitter. 125mm square mc-Si selective emitter cells had improved Voc (5.6 mV) and Jsc (0.66 mA.cm2) due to better surface passivation and blue response. The final average cell efficiency of the best selective emitter group processed here was increase by ~0.3%abs to ~16.4%. |
| Databáze: | OpenAIRE |
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