General Method for Simulation of 2D GISAXS Intensities for Any Nanostructured Film Using Discrete Fourier Transforms
| Autor: | Hugh W. Hillhouse, Michael P. Tate |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Electron density
Materials science business.industry Form factor (quantum field theory) Scale factor Molecular physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Matrix (mathematics) Reciprocal lattice General Energy Optics Grazing-incidence small-angle scattering Physical and Theoretical Chemistry Born approximation Structure factor business |
| Zdroj: | The Journal of Physical Chemistry C. 111:7645-7654 |
| ISSN: | 1932-7455 1932-7447 |
| Popis: | A fast, flexible 2D GISAXS simulation method based on the distorted-wave Born approximation (DWBA) has been developed for nanostructured thin films using discrete Fourier transforms of a N × N × N matrix that represents the electron density. By expressing the electron density in matrix form, various models of electron density distributions can be easily simulated and compared to experimental data. In addition to modeling the effects of overall symmetry and orientation on the relative intensities of the Bragg peaks, this approach can be used to evaluate specific details of the nanostructure such as pore connectivity, domain size, domain shape, positional disorder, orientation disorder, and polydispersity. These effects are included in a natural way without making a decoupling approximation between structure factor and form factor. The range of reciprocal space simulated is set by the size of the matrix N and the scale factor β that sets the real-space length of each matrix element, given by 1/(2Nβ) < |s |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|