Extraction method for parasitic capacitances and inductances of HEMT models
| Autor: | Bo-Chao Zhao, Zheng Jiaxin, Hengshuang Zhang, Yang Lu, Xiaohua Ma, Yue Hao, Peijun Ma |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science 020206 networking & telecommunications 02 engineering and technology High-electron-mobility transistor Hybrid-pi model Condensed Matter Physics Topology 01 natural sciences Capacitance Electronic Optical and Magnetic Materials Small-signal model Depletion region 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Materials Chemistry Electronic engineering Scattering parameters Equivalent circuit Parasitic extraction Electrical and Electronic Engineering |
| Zdroj: | Solid-State Electronics. 129:108-113 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2016.12.003 |
| Popis: | A new method to extract parasitic capacitances and inductances for high electron-mobility transistors (HEMTs) is proposed in this paper. Compared with the conventional extraction method, the depletion layer is modeled as a physically significant capacitance model and the extrinsic values obtained are much closer to the actual results. In order to simulate the high frequency behaviour with higher precision, series parasitic inductances are introduced into the cold pinch-off model which is used to extract capacitances at low frequency and the reactive elements can be determined simultaneously over the measured frequency range. The values obtained by this method can be used to establish a 16-elements small-signal equivalent circuit model under different bias conditions. The results show good agreements between the simulated and measured scattering parameters up to 30 GHz. |
| Databáze: | OpenAIRE |
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