Effect of spatial distribution of generation rate on bulk heterojunction organic solar cell performance: A novel semi-analytical approach
| Autor: | Mokter Mahmud Chowdhury, Sumaiya Wahid, Faysal Hakim, Mahnaz Islam, Md. Kawsar Alam |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Dependency (UML) Organic solar cell Gaussian Analytical chemistry 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Space (mathematics) 01 natural sciences Polymer solar cell 0104 chemical sciences Electronic Optical and Magnetic Materials Computational physics Active layer Biomaterials symbols.namesake Position (vector) Materials Chemistry symbols Electrical and Electronic Engineering Closed-form expression 0210 nano-technology |
| Zdroj: | Organic Electronics. 46:226-241 |
| ISSN: | 1566-1199 |
| Popis: | We present a physics-based semi-analytical model of bulk heterojunction (BHJ) organic solar cell (OSC) for predicting the electrical characteristics of the device, taking into account the space dependency of generation rate profiles. The model enables us to derive the J-V characteristics of BHJ OSC without the need of a closed form expression of arbitrary carrier generation rate (which may not exist), hence avoiding the cumbersome numerical fitting method employed in literature previously. Using the proposed model, we perform an extensive analysis to study the effect of spatial distribution of generation rate profiles on the device performance. For this purpose, we use Gaussian shaped profiles that have a common average value thus retaining the total number of generated carriers same. We vary the position of the generation peak and its sharpness (width of the Gaussian peak) as well as number of peaks to analyze their effects on device efficiency. For the considered profiles, results show that the optimized profile has a peak carrier generation rate exactly halfway through the active layer and falls off sharply on either side. In the end, we propose methods of controlling the generation profiles by modifying the device structure and perform optical simulation to show the corresponding generation profiles. Thus, we show the usefulness of our derived model in finding the spatial distribution of a given number of carriers along the active layer that yields the best device performance. |
| Databáze: | OpenAIRE |
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