An STM-16 Frame Termination VLSI With 2.5-Gb/s/Pin Input/Output Buffers: High-Speed and Low-Power Multi- $\mathrm{V}_{\rm DD}$ CMOS/SIMOX Techniques
| Autor: | Mika Nishisaka, Yasuhiro Sato, Nobutaro Shibata, Yusuke Ohtomo |
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| Rok vydání: | 2015 |
| Předmět: |
Very-large-scale integration
Input/output Engineering business.industry Amplifier Electrical engineering Multiplexer CMOS Hardware and Architecture Logic gate Low-power electronics Hardware_INTEGRATEDCIRCUITS Electronic engineering Signal integrity Electrical and Electronic Engineering business Software |
| Zdroj: | IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 23:1089-1102 |
| ISSN: | 1557-9999 1063-8210 |
| DOI: | 10.1109/tvlsi.2014.2333589 |
| Popis: | Many of the current wireline networks are digitalized. In Japan, a synchronous digital hierarchy (SDH) system is installed in the public switched telephone network, and application data are transferred with a synchronous transfer module (STM). This paper presents an STM-16 frame termination VLSI fabricated with a 0.3- $\mu $ m quintuple-metal CMOS/SIMOX process. To reduce power consumption, we employ a multi- $V_{\rm DD}$ architecture using 2- and 1-V power supplies. Also, fully depleted silicon on insulator (FD-SOI) devices are used to obtain a higher operating speed and to reduce dynamic power dissipation. To install another powerline in every standard cell without increasing the cell size, a stacked multiple powerlines scheme is proposed. In addition, some dedicated standard cells are developed to convert the logical high level without degrading the signal integrity. With regards to hard macros, 2-V MUX/DEMUX macros achieve a high operating speed of 2.5 Gb/s, while a dual-port SRAM macro can operate at a low supply voltage of 1 V. Moreover, 2-V 50- $\Omega $ -terminated input/output buffers using a new direct-drive amplifier operate without dedicated power supplies. With our STM-16 frame termination VLSI, the power consumption during the standby is 34 mW, and that for 2.5-Gb/s operation is 1.2 W at 25 °C. |
| Databáze: | OpenAIRE |
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