t-BOC blocked hydroxyphenyl-methacrylates: On the way to quarter micron deep-UV lithography
| Autor: | Walter Spiess, Ralph R. Dammel, Klaus-Jürgen Przybilla, Horst Röschert, Georg Pawlowski |
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| Rok vydání: | 1992 |
| Předmět: |
chemistry.chemical_classification
Bisphenol A Materials science Polymers and Plastics Onium compound General Chemistry Polymer Photoresist Methacrylate Photochemistry law.invention chemistry.chemical_compound Photosensitivity chemistry law Polymer chemistry Materials Chemistry Photolithography Lithography |
| Zdroj: | Polymer Engineering & Science. 32:1516-1522 |
| ISSN: | 0032-3888 |
| DOI: | 10.1002/pen.760322013 |
| Popis: | t-Butyloxycarbonyl (t-BOC) blocked compounds based on the protection of phenolic groups, e.g. poly-4-hydroxystyrene derivatives, Bisphenol A type dissolution inhibitors, or onium salt photoacid generators, have found widespread research interest for photoresist systems with excellent photosensitivity and high resolution power. We have made an extension of this approach using new phenol type polymers. This contribution presents first details on the chemistry of these systems and results of their lithographic evaluation as positive tone photoresists for deep UV applications |
| Databáze: | OpenAIRE |
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