Analytical subthreshold current modeling of nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a vertical gaussian doping profile
| Autor: | Jing Liu, Sufen Wei, Guohe Zhang, Huixiang Huang, Li Geng, Cheng-Fu Yang, Zhibiao Shao |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Subthreshold conduction business.industry Gaussian Doping Silicon on insulator 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Subthreshold slope Electronic Optical and Magnetic Materials symbols.namesake Hardware and Architecture 0103 physical sciences Electronic engineering symbols Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Nanoscopic scale Current density Doping profile |
| Zdroj: | Microsystem Technologies. 24:179-192 |
| ISSN: | 1432-1858 0946-7076 |
| DOI: | 10.1007/s00542-016-3221-8 |
| Popis: | Based on the evanescent-mode analysis, an insightful study of the channel potential is performed for the nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a vertical Gaussian doping. And a two-dimensional (2D) analytical subthreshold current model is presented. The front and the back channel subthreshold currents are effectively derived using the inversion layer current density model which takes the Gaussian doping into account. The accuracy of the model has been verified by 2D numerical device simulations using Sentaurus Technology Computer-Aided Design (TCAD) from Synopsys. The model provides a deep understanding and can be instrumental for the nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a non-uniform doping profile operating in the subthreshold regime. |
| Databáze: | OpenAIRE |
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