(Invited) Selective Etches for Gate-All-Around (GAA) Device Integration: Opportunities and Challenges

Autor:	Yusuke Oniki, Efrain Altamirano-Sánchez, Frank Holsteyns
Rok vydání:	2019
Předmět:	Interconnection Fabrication Materials science business.industry Transistor Dielectric Isotropic etching law.invention Semiconductor law Shallow trench isolation Optoelectronics business Metal gate
Zdroj:	ECS Transactions. 92:3-12
ISSN:	1938-5862 1938-6737
DOI:	10.1149/09202.0003ecst
Popis:	This paper addresses the opportunities and challenges of wet and dry selective etches in the integration of gate-all-around (GAA) field-effect transistor (FET), which is emerging as a promising solution to replace FinFET for the advanced logic devices. For the GAA device fabrication, a quintessential challenge is a controlled isotropic etching of dielectrics, semiconductors, and metals with high selectivity to the exposed materials. In this paper, the significance of the unit process modules in the GAA device integration: shallow trench isolation (STI), inner spacer formation, replacement metal gate (RMG) and self-aligned interconnect in the middle-of-line (MOL) and the back-end-of-line (BEOL), will be discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::978b3a192487ed9024a09320ea99d6a0 https://doi.org/10.1149/09202.0003ecst Zobrazit plný text záznamu