Nanobeam electron diffraction strain mapping in monocrystalline silicon of modern trench power MOSFETs

Autor:	Stefan Karner, Oliver Blank, Maximilian Rösch, Jakub Zalesak, Jozef Keckes, Christoph Gammer
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Microelectronic Engineering. 264:111870
ISSN:	0167-9317
DOI:	10.1016/j.mee.2022.111870
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::978ad0274902e894f7c3c2c49e2e9d49 https://doi.org/10.1016/j.mee.2022.111870 Zobrazit plný text záznamu Full Text from ScienceDirect