Performance of W100−xNx diffusion barriers between 〈Si〉 and Cu
| Autor: | P.J. Pokela, C.-K. Kwok, M.-A. Nicolet, S. Raud, Elzbieta Kolawa |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Diffraction
Materials science Annealing (metallurgy) Alloy Analytical chemistry General Physics and Astronomy Surfaces and Interfaces General Chemistry engineering.material Condensed Matter Physics Surfaces Coatings and Films Amorphous solid chemistry.chemical_compound chemistry engineering Electrical measurements Crystallite Tungsten nitride Diode |
| Zdroj: | Applied Surface Science. 53:364-372 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/0169-4332(91)90287-t |
| Popis: | The performance of reactively RF sputtered tungsten nitride diffusion barriers in both amorphous (W 76 N 24 ) and polycrystalline (W 46 N 54 ) forms is studied in the 〈Si〉/W 100- x N x /Cu contact metallization by electrical measurements on shallow n + p jun ction diodes, backscattering spectrometry, and X-ray diffraction analyses. The DC characteristics of the diodes measured before and after vacuum annealings for 30 min reveal that about 120 nm thick, initially X-ray amorphous W 76 N 24 film between 〈Si〉 and Cu preserves the integrity of the metallization up to 750° C. The stability is confirmed also both by 2 MeV 4 He 2+ backscattering and X-ray diffraction analyses. Annealing at 800°C for 30 min results in overall intermixing of the layers, causing a shorting of the shallow junction diodes and forming a mixture of Cu, β-W 2 N, α-W, (Cu, Si)′, and W 5 Si 3 phases in the structure observed by X-rays. Analysis by electrical measurements on shallow junction diodes and X-ray diffraction reveals that the initially polycrystalline form of the W 100- x N x alloy is an inferior barrier. After annealing at 750°C for 30 min the DC characteristics of the diodes show a significant increase of the leakage current, and a mixture of Cu, β-W 2 N, and (Cu, Si)-ϵ phases are found by X-ray diffraction analysis. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|