Steady-state thermal uniformity and gas flow patterns in a rapid thermal processing chamber

Autor:	K. L. Knutson, B.Y.H. Liu, Stephen A. Campbell, J. D. Leighton, K.-H. Ahn
Rok vydání:	1991
Předmět:	Steady state Chemistry Thermodynamics Substrate (electronics) Mechanics Edge (geometry) Flow pattern Condensed Matter Physics Epitaxy Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials Rapid thermal processing Thermal Wafer Electrical and Electronic Engineering
Zdroj:	IEEE Transactions on Semiconductor Manufacturing. 4:14-20
ISSN:	0894-6507
DOI:	10.1109/66.75859
Popis:	The steady-state temperature distribution and gas flow patterns in a rapid thermal processing system are calculated numerically for various process conditions. The results are verified by comparison to experimental epitaxial growth rate data. The gas flow patterns and temperature distributions depend strongly on pressure and ambient composition. Steady-state uniformity is found to be described to first order by the radiant uniformity at the wafer surface and substrate heat flow considerations alone. For high-thermal-uniformity systems, however, convective cooling does play an important role, approximately equal to that of edge losses. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9771817c5674899436b713052fd8c9af https://doi.org/10.1109/66.75859 Zobrazit plný text záznamu