Growth and studies of Si-doped AlN layers
| Autor: | Martin Feneberg, Ferdinand Scholz, Rolf Sauer, Ute Kaiser, G. M. Prinz, J. Hertkorn, Robert A. R. Leute, S.B. Thapa, Johannes Biskupek, Klaus Thonke, O. Klein |
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| Rok vydání: | 2008 |
| Předmět: |
Range (particle radiation)
Materials science Doping Analytical chemistry chemistry.chemical_element Condensed Matter Physics Spectral line Inorganic Chemistry Crystallography chemistry Pulmonary surfactant Electrical resistivity and conductivity Materials Chemistry Metalorganic vapour phase epitaxy Luminescence Indium |
| Zdroj: | Journal of Crystal Growth. 310:4939-4941 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2008.07.091 |
| Popis: | Edge-type threading dislocations (TDs) can be reduced by increasing the epilayer thickness of undoped AlN grown on c -plane sapphire substrate by low pressure MOVPE. Indium as a surfactant helps to reduce cracks in both, undoped and Si-doped AlN epilayers. For high Si concentrations, edge-type TDs bend and bunch together and finally emerge as V-pits on the epilayer surface. We observed an increasing intensity ratio between the deep level transitions at around 3 eV and the near-band-edge luminescence of the low temperature (10 K) CL spectra for increasing Si concentration, whereas the electrical conductivity decreased in the range of higher doping concentration. A fair electrical conductivity is obtained for a sample having moderate Si concentration of 2 × 10 18 cm - 3 . |
| Databáze: | OpenAIRE |
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