Extraction of Separated Source and Drain Resistances in Amorphous Indium–Gallium–Zinc Oxide TFTs Through $C$– $V$ Characterization
| Autor: | Sungchul Kim, Hagyoul Bae, Minkyung Bae, Ja Sun Shin, Hyunkwang Jung, Jieun Lee, Jaeman Jang, Dae Hwan Kim, Dongsik Kong, Dong Myong Kim |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Transistor Extraction (chemistry) Direct current Oxide Capacitance Electronic Optical and Magnetic Materials Amorphous solid law.invention chemistry.chemical_compound chemistry Thin-film transistor law Parasitic element Electronic engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 32:761-763 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | Considering asymmetry caused by layout, process, and device degradation, separate extraction of the source and drain resistances, i.e., RS and RD, respectively, from the total resistance RTOT is very important in the design, modeling, and characterization of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). Due to the insulated gate structure, however, separate extraction is difficult through direct-current I-V characterization. In this letter, we propose a simple and useful technique for separate extraction of RS from RD in a-IGZO TFTs through a two-terminal parallel-mode C -V technique. We experimentally verified the validity of the proposed technique by comparing the result with the source-to-drain resistance from the I-V characteristics. |
| Databáze: | OpenAIRE |
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